SY6882A/B integrates an extremely low RDS(ON) N-channel MOSFET with precise over-voltage protection to against high-voltage faults up to 25V. Linear mode is active to maintain the output voltage at 5.5V with the input voltage up to the input over-voltage threshold. SY6882A is available with internal fixed over-voltage protection point at 7.1V and SY6882B has the programmable over-voltage threshold by two external resistors. The internal NFET will be turned off to disconnect input and output when the VIN is higher than the over-voltage threshold. Low RDS(ON) of the integrated switch helps to reduce power loss during the normal operation.Control the /EN pin to enable or disable the device and /FLB indicates OVP and OTP.
展开剩余46%特性
• 内部N沟道功率管低导通电阻：100mΩ（典型值）
• 2.0A 最大持续电流
• 高达 25V过压保护
• 外部可编程过压保护阈值
• 热关断保护，自动恢复功能
• OVP 和 OTP 故障标志
• 静态电流：300µA （最大值）
• 关断电流：20µA （最大值）
• 符合 RoHS 标准且无卤素
• 紧凑型封装：DFN2×2-8
应用
·Cell Phones
·Digital Still cameras
·GPS
·MP3 Players
·Personal Data Assistants(PDAs)
·USB Hot Swap/Live Insertion Device
发布于：广东省盛多网提示：文章来自网络，不代表本站观点。
